Publication date: Dec 08, 2021
An ab initio study of the coupled electrons and phonon transport properties of MoS2-hBN devices. A comparison of the device characteristics when hBN is treated as a perfectly insulating, non vibrating layer and one where it is included in the DFT together with MoS2.
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File name | Size | Description |
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Quantum_transport_oxide.zip
MD5md5:d0df72b89e8eab874325fae35c83e7b2
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37.8 MiB | input files for DFT calculation and quantum transport |
2021.215 (version v1) [This version] | Dec 08, 2021 | DOI10.24435/materialscloud:7f-5t |